The floatzone (FZ) method of silicon crystal production provides an ingot with considerable advantages. Due to the absence of oxygen in the molten silicon during the FZ process, there are no effects of thermal donors or oxygen precipitates. This produces a silicon wafer that has extremely stable resisitivity performance and high carrier lifetimes.

Years of floatzone experience connects with a powerful numerical simulation group enable Siltronoc to forward innovations and continuous improvements to our customer.

One of the main focuses is a continuous lowering of the total resistivity variations.