| 2006 |
Joint Venture with Samsung Electronics Co for the construction of a 300 mm wafer fab in Singapore |
| 2004 |
Start of production at the 300 mm silicon wafer production line in Freiberg |
| 2004 |
Licence agreement with Soitec on SMART-CUT™ - Technology |
| 2004 |
Change of name to Siltronic AG |
| 2003 |
Complete take-over of Wacker NSCE Corporation. |
| 2002 |
Start of construction of the new 300 mm silicon wafer production line in Freiberg. |
| 2000 |
Foundation of Wacker NSCE Corporation, Japan: joint venture between Nippon Steel Corporation (45 %) and WACKER SILTRONIC (55 %). |
| 1999 |
Start of production at the manufacturing plant in Singapore. |
| 1998 |
Commissioning of the first section of the 300 mm pilot production line. |
| 1997 |
Foundation of Wacker Siltronic Singapore Pte. Ltd. |
| 1996 |
Wacker Siltronic GmbH is converted into a joint stock company. |
| 1994 |
Wacker-Chemitronic GmbH changes its name to Wacker Siltronic GmbH. |
| 1990 |
First 300 mm wafer research and development projects. |
| 1984 |
First 200 mm wafers at Wacker Chemitronic |
| 1978 |
Foundation of Wacker Siltronic Corporation in Portland (USA). |
| 1968 |
Foundation of Wacker-Chemitronic GmbH. |
| 1962 |
Development of the first silicon wafer. |
| 1961 |
High-purity silicon facilities commence large-scale industrial production. |
| 1959 |
First float-zone purification facility is commissioned at the new high-purity silicon plant. |
| 1958 |
Start of semiconductor production. |
| 1953 |
Start of research and development in the area of high-purity silicon |